? 2006 ixys corporation all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c55v v dgr t j = 25 c to 175 c; r gs = 1 m 55 v v gsm transient 20 v i d25 t c = 25 c64a i l package current limit, rms to-252 25 a i dm t c = 25 c, pulse width limited by t jm 170 a i ar t c = 25 c10a e as t c = 25 c 250 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 18 p d t c = 25 c 130 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3 g to-252 0.35 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a55v v gs(th) v ds = v gs , i d = 25 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 100 na i dss v ds = v dss 1 a v gs = 0 v t j = 150 c 100 a r ds(on) v gs = 10 v, i d = 0.5 i d25 , notes 1, 2 13 m trenchmv tm power mosfet preliminary technical information n-channel enhancement mode avalanche rated ixtp64n055t IXTY64N055T v dss =55 v i d25 =64 a r ds(on) 13 m ds99498 (11/06) to-220 (ixtp) d (tab) g = gate d = drain s = source tab = drain to-252 (ixty) d (tab) s g d s g features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - high side switch - 12v battery - abs systems dc/dc converters and off-line ups primary- side switch high current switching applications
ixys reserves the right to change limits, test conditions, and dimensions. ixtp64n055t IXTY64N055T symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , note 1 17 28 s c iss 1420 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 255 pf c rss 68 pf t d(on) 19 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 10 a 52 ns t d(off) r g = 18 (external) 37 ns t f 30 ns q g(on) 37 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 10 a 10 nc q gd 11 nc r thjc 1.15 c/w r thcs to-220 0.5 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 64 a i sm repetitive 170 a v sd i f =25 a, v gs = 0 v, note 1 1.2 v t rr i f = 25 a, -di/dt = 100 a/ s30ns v r = 30 v, v gs = 0 v notes: 1. pulse test: t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-252 (ixty) outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 1 anode 2 nc 3 anode 4 cathode pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-220 (ixtp) outline preliminary technical information the product presented herein is under development. the technical specifica- tions offered are derived from data gathered during objective characteriza- tions of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537
? 2006 ixys corporation all rights reserved ixtp64n055t IXTY64N055T fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 7v 5v 9v 8v 6v fig. 3. output characteristics @ 150oc 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 32a value vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 64a i d = 32a fig. 5. r ds(on) normalized to i d = 32a value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 0 20 40 60 80 100 120 140 160 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixtp64n055t IXTY64N055T fig. 7. input admittance 0 10 20 30 40 50 60 70 80 33.544.555.566.577.5 v gs - volts i d - amperes t j = - 40oc 25oc 150oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 0 102030405060708090 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = 27.5v i d = 10a i g = 1ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved ixtp64n055t IXTY64N055T ixys ref: t_64n055t (1v) 7-14-06.xls fig. 14. resistive turn-on rise time vs. drain current 20 25 30 35 40 45 50 55 60 65 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t r - nanoseconds r g = 18 v gs = 10v v ds = 27.5v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 30 40 50 60 70 80 90 15 20 25 30 35 40 45 50 55 60 r g - ohms t r - nanoseconds 16 18 20 22 24 26 28 30 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 27.5v i d = 30a i d = 10a fig. 16. resistive turn-off switching times vs. junction temperature 26 28 30 32 34 36 38 40 42 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 22 26 30 34 38 42 46 50 54 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 18 , v gs = 10v v ds = 27.5v i d = 10a i d = 30a fig. 17. resistive turn-off switching times vs. drain current 26 28 30 32 34 36 38 40 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t f - nanoseconds 30 34 38 42 46 50 54 58 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 18 , v gs = 10v v ds = 27.5v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 25 30 35 40 45 50 55 60 65 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 18 v gs = 10v v ds = 27.5v i d = 30a i d = 10a fig. 18. resistive turn-off switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 110 120 15 20 25 30 35 40 45 50 55 60 r g - ohms t f - nanoseconds 30 40 50 60 70 80 90 100 110 120 130 t d ( o f f ) - nanosecond s t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 27.5v i d = 30a i d = 10a
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